The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Jan. 18, 2006
Kuan-po Chen, Hsinchu, TW;
Mu-yi Liu, Hsinchu, TW;
Kuan-Po Chen, Hsinchu, TW;
Mu-Yi Liu, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device is provided. The semiconductor device comprises a substrate, a stacked gate structure, doped regions and high stress material layers. The stacked gate structure is located on the substrate. The stacked gate structure includes at least a dielectric layer and a gate sequentially disposed over the substrate. The doped regions are disposed in the substrate on each side of the stacked gate structure. The high stress material layers are disposed on the substrate to cover the doped regions. The high stress material layers can increase the mobility of the carriers in the doped regions and hence accelerate the operating speed of the device.