The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2004
Filed:
May. 24, 2002
Tso-Hung Fan, Taipei Hsien, TW;
Yen-Hung Yeh, Taoyuan Hsien, TW;
Kwang-Yang Chan, Hsinchu, TW;
Mu-Yi Liu, Taichung, TW;
Tao-Cheng Lu, Kaoshiung, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A fabrication method for a mask read only memory device is described. The method provides a substrate, and a doped conductive layer is formed on the substrate. After this, the doped conductive layer is patterned to form a plurality of bar-shaped doped conductive layers, followed by forming a dielectric layer on the substrate and on the bar-shaped conductive layers by thermal oxidation. A plurality of diffusion regions are concurrently formed under the bar-shaped conductive layers in the substrate. A patterned conductive layer is further formed on the dielectric layer.