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For the Inventor, By the Inventor

Hsinchu, Taiwan

Kwang-Yang Chan

This inventor holds 11 USPTO granted patents. Top assignee: Macronix International Co., Ltd.. Active years: 2003-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kwang-Yang Chan. Retrieved from https://idiyas.com/inventor/kwang-yang-chan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11

% Patents Active = 100.0

Average Co-Inventor Count = 5.1

ph-index = 3

Forward Citations = 51(Granted Patents)


Company Filing History:

goldMedal11 out of 3,609 
 
Macronix International Co., Ltd.
 patents

Years Active: 2003-2006

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11 patents (USPTO):Explore Patents
1. 7002849 - Method for programming and erasing non-volatile memory with nitride tunneling layer (2006-02-21),
2. 6919607 - Structure of two-bit mask read-only memory device and fabricating method thereof (2005-07-19),
3. 6838691 - Chalcogenide memory and method of manufacturing the same (2005-01-04),
4. 6834013 - Method for programming and erasing non-volatile memory with nitride tunneling layer (2004-12-21),
5. 6790730 - Fabrication method for mask read only memory device (2004-09-14),
6. 6713821 - Structure of a mask ROM device (2004-03-30),
7. 6706575 - Method for fabricating a non-volatile memory (2004-03-16),
8. 6649971 - Nitride read-only memory cell for improving second-bit effect and method for making thereof (2003-11-18),
9. 6590266 - 2-bit mask ROM device and fabrication method thereof (2003-07-08),
10. 6587387 - Device and method for testing mask ROM for bitline to bitline isolation leakage (2003-07-01),
11. 6531361 - Fabrication method for a memory device (2003-03-11),

Title: Kwang-Yang Chan: Innovator in Non-Volatile Memory Technology

Introduction

Kwang-Yang Chan is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of non-volatile memory technology, holding a total of 11 patents. His innovative approaches have paved the way for advancements in memory devices.

Latest Patents

One of his latest patents is titled "Method for programming and erasing non-volatile memory with nitride tunneling layer." This patent describes a method for programming non-volatile memory by applying specific voltages to the gate and drain, which generates hot electrons that are injected into a charge-trapping layer. The process of erasing the memory involves applying positive biases to the drain and gate, allowing hot electron holes to be injected into the charge-trapping layer through the nitride tunneling layer.

Another notable patent is the "Structure of two-bit mask read-only memory device and fabricating method thereof." This invention outlines a memory structure that includes various components such as a substrate, gate structure, and buried drain region. The design aims to enhance the efficiency and functionality of mask ROM devices.

Career Highlights

Kwang-Yang Chan is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in developing advanced memory solutions that meet the growing demands of the technology industry.

Collaborations

Throughout his career, Kwang-Yang Chan has collaborated with notable colleagues, including Tao-Cheng Lu and Tso-Hung Fan. These collaborations have contributed to the successful development of various memory technologies.

Conclusion

Kwang-Yang Chan's contributions to non-volatile memory technology are significant and impactful. His innovative patents and collaborations highlight his dedication to advancing the field. His work continues to influence the development of memory devices, ensuring a lasting legacy in the technology sector.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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