The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2003
Filed:
Aug. 28, 2002
Yen-Hung Yeh, Taoyuan Hsien, TW;
Wen-Jer Tsai, Hualian, TW;
Mu-Yi Liu, Taichung, TW;
Kwang-Yang Chan, Hsinchu, TW;
Tso-Hung Fan, Taipei, TW;
Tao-Cheng Lu, Kaoshiung, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A NROM cell for reducing for reducing the second-bit effect is described. The NORM cell of the present invention is formed with a substrate, a silicon oxide/silicon nitride/silicon oxide (ONO) layer disposed on the substrate, a gate disposed on the silicon oxide/silicon nitride/silicon oxide layer, source/drain regions configured in the substrate beside the gate, and a shallow pocket doped region configured between the source/drain regions and the ONO layer beside the gate. The depth of the shallow pocket doped region is sufficiently small to prevent interference to the current flow that travels to the source/drain regions.