The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
May. 08, 2002
Mu-Yi Liu, Taichung, TW;
Kwang-Yang Chan, Hsinchu, TW;
Yen-Hung Yeh, Taoyuan Hsien, TW;
Tso-Hung Fan, Taipei Hsien, TW;
Tao-Cheng Lu, Kaoshiung, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A fabrication method for a memory device is described. The method includes sequentially forming a pad oxide layer and a mask layer on a substrate, wherein the mask layer exposes a portion of the pad oxide layer. Thereafter, an ion implantation process is conducted to form a buried bit line in the substrate that is not covered by the mask layer. A raised bit line is then formed on the pad oxide layer above the buried bit line. The mask layer and the pad oxide layer are then removed, followed by forming a conformal gate oxide layer on the surface of the substrate and the raised bit line. A word line is further formed on the gate oxide layer.