The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2005
Filed:
Mar. 04, 2002
Mu-yi Liu, Taichung, TW;
Tso-hung Fan, Banchiau, TW;
Kwang-yang Chan, Hsinchu, TW;
Yen-hung Yeh, Taoyuan Hsien, TW;
Tao-cheng LU, Kaohsiung, TW;
Mu-Yi Liu, Taichung, TW;
Tso-Hung Fan, Banchiau, TW;
Kwang-Yang Chan, Hsinchu, TW;
Yen-Hung Yeh, Taoyuan Hsien, TW;
Tao-Cheng Lu, Kaohsiung, TW;
Macronix International, Co., Ltd., Hsin-chu, TW;
Abstract
A method of manufacturing chalcogenide memory in a semiconductor substrate. The method includes the steps of forming a N+ epitaxy layer on the semiconductor substrate; forming a N− epitaxy layer on the N+ epitaxy layer; forming a first STI in the N+ and N− epitaxy layers to isolate a predetermined word line region; forming a second STI in the N− epitaxy layer to isolate a predetermined P+ doped region; forming a dielectric layer on the N− epitaxy layer; patterning the dielectric layer to form a first opening and performing a N+ doping on the N− epitaxy layer via the first opening such that a N+ doped region is formed in the N− epitaxy layer and connected to the N+ epitaxy layer; patterning the dielectric layer to form a second opening and performing a P+ doping on the N− epitaxy layer such that a P+ doped region is formed; forming contact plugs in the first opening and the second opening respectively; and forming an electrode on each contact plug, wherein the electrode includes a lower electrode, a chalcogenide layer and an upper electrode.