The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Aug. 02, 2005
Mu-yi Liu, Taichung, TW;
Tao-cheng LU, Hsinchu, TW;
Mu-Yi Liu, Taichung, TW;
Tao-Cheng Lu, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
An EEPROM cell includes first and second assist gates on opposite sides of a charge retaining insulating layer. Current in the EEPROM memory cell flows between inversion layers, which are created in response to a bias applied to the assist gates. The insulating layer can include silicon nitride, which is provided between layers of silicon dioxide above the channel region, such that these layers can constitute a dielectric stack, which can be fabricated to occupy a relatively small area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile