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For the Inventor, By the Inventor

Yongin, South Korea

Moon-han Park

This inventor holds 23 USPTO granted patents and 1 published patent application, primarily in Semiconductor Manufacturing. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1997-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Moon-han Park. Retrieved from https://idiyas.com/inventor/moon-han-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 87.0

Average Co-Inventor Count = 3.6

ph-index = 10

Forward Citations = 235(Granted Patents)


Location History:

  • Seoul, KR (1997 - 1998)
  • Kyungki-do, KR (1999 - 2004)
  • Gyeonggi-do, KR (2008 - 2014)
  • Yongin-si, KR (2006 - 2020)

Company Filing History:

goldMedal23 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1997-2020

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Areas of Expertise:
Integrated Circuit
MOSFET Devices
FinFET Transistor
Trench Isolation
Chemical-Mechanical Polishing
Selective Epitaxial Growth
Gate Insulating Layers
Recess-Inhibiting Layers
Isolation Methods
Device Fabrication
Nitrogen-Injected Oxide
Patterning Techniques
23 patents (USPTO):Explore Patents
1. 10755932 - Method of manufacturing integrated circuit device (2020-08-25),
2. 10224204 - Method of manufacturing integrated circuit device (2019-03-05),
3. 9793399 - Semiconductor device having insulating pattern and method of forming the same (2017-10-17),
4. 8877579 - Methods of manufacturing semiconductor devices (2014-11-04),
5. 8815673 - Methods of forming MOSFET devices using nitrogen-injected oxide layers to form gate insulating layers having different thicknesses (2014-08-26),
6. 8664111 - Method of patterning a semiconductor device with hard mask (2014-03-04),
7. 8455345 - Methods of forming gate structure and methods of manufacturing semiconductor device including the same (2013-06-04),
8. 7723193 - Method of forming an at least penta-sided-channel type of FinFET transistor (2010-05-25),
9. 7439596 - Transistors for semiconductor device and methods of fabricating the same (2008-10-21),
10. 7385247 - At least penta-sided-channel type of FinFET transistor (2008-06-10),
11. 7368792 - MOS transistor with elevated source/drain structure (2008-05-06),
12. 7033895 - Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth process (2006-04-25),
13. 6717231 - Trench isolation regions having recess-inhibiting layers therein that protect against overetching (2004-04-06),
14. 6537914 - Integrated circuit device isolation methods using high selectivity chemical-mechanical polishing (2003-03-25),
15. 6465866 - Trench isolation regions having trench liners with recessed ends (2002-10-15),

Title: Inventor Moon-han Park

Introduction: Moon-han Park is a renowned inventor based in Yongin-si, South Korea, known for his groundbreaking contributions to various fields.

Latest Patents: Moon-han Park holds several patents in the areas of technology and engineering, showcasing his innovative mindset and problem-solving abilities.

Career Highlights: Throughout his career, Moon-han Park has demonstrated a keen interest in developing cutting-edge solutions that have the potential to revolutionize industries. His passion for innovation has led to the creation of several successful inventions that have garnered international recognition.

Collaborations: Moon-han Park has collaborated with leading research institutions, universities, and companies to further his inventions and bring them to market. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Moon-han Park's dedication to innovation and his relentless pursuit of excellence make him a standout figure in the world of inventors. His contributions continue to inspire future generations of innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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