The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Jan. 31, 2005
Applicants:
Jae-yoon Yoo, Seoul, KR;
Hwa-sung Rhee, Seongnam-si, KR;
Tetsuji Ueno, Suwon-si, KR;
Ho Lee, Gwangju-gun, KR;
Seung-hwan Lee, Seoul, KR;
Hyun-suk Kim, Seoul, KR;
Moon-han Park, Yongin-si, KR;
Inventors:
Jae-Yoon Yoo, Seoul, KR;
Hwa-Sung Rhee, Seongnam-si, KR;
Tetsuji Ueno, Suwon-si, KR;
Ho Lee, Gwangju-gun, KR;
Seung-Hwan Lee, Seoul, KR;
Hyun-Suk Kim, Seoul, KR;
Moon-Han Park, Yongin-si, KR;
Assignee:
Samsung Electronics Co, Ltd., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention discloses a transistor for a semiconductor device capable of preventing the generation of a depletion capacitance in a gate pattern due to the diffusion of impurity ions. The present invention also discloses a method of fabricating the transistor.