logo

For the Inventor, By the Inventor

Seoul, South Korea

Jae-Yoon Yoo

USPTO Granted Patents = 14

 

Average Co-Inventor Count = 4.2

ph-index = 8

Forward Citations = 193(Granted Patents)


Company Filing History:

goldMedal14 out of 131,324 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2002-2010

Loading Chart...
Loading Chart...
14 patents (USPTO):Explore Patents
1. 7723193 - Method of forming an at least penta-sided-channel type of FinFET transistor (2010-05-25),
2. 7618868 - Method of manufacturing field effect transistors using sacrificial blocking layers (2009-11-17),
3. 7439596 - Transistors for semiconductor device and methods of fabricating the same (2008-10-21),
4. 7385247 - At least penta-sided-channel type of FinFET transistor (2008-06-10),
5. 7368792 - MOS transistor with elevated source/drain structure (2008-05-06),
6. 7101776 - Method of fabricating MOS transistor using total gate silicidation process (2006-09-05),
7. 7084041 - Bipolar device and method of manufacturing the same including pre-treatment using germane gas (2006-08-01),
8. 7033895 - Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth process (2006-04-25),
9. 6987310 - Multi-layered structure including an epitaxial layer having a low dislocation defect density, semiconductor device comprising the same, and method of fabricating the semiconductor device (2006-01-17),
10. 6878575 - Method of forming gate oxide layer in semiconductor devices (2005-04-12),
11. 6835621 - Method of fabricating non-volatile memory device having a structure of silicon-oxide-nitride-oxide-silicon (2004-12-28),
12. 6624496 - Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer (2003-09-23),
13. 6486039 - Method of fabricating a trench isolation structure having sidewall oxide layers with different thicknesses (2002-11-26),
14. 6383877 - Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer (2002-05-07),

Title: The Innovative Contributions of Jae-Yoon Yoo in Semiconductor Technology

Introduction

Jae-Yoon Yoo, an esteemed inventor based in Seoul, South Korea, has made significant strides in the field of semiconductor technology. With a total of 14 patents to his name, he continues to push the boundaries of innovation in his work at Samsung Electronics Co., Ltd.

Latest Patents

Among his latest patents, Yoo has developed a novel method for forming an at least penta-sided-channel type of FinFET transistor. This invention features a base and a semiconductor body arranged in a long dimension, which includes source and drain regions sandwiching a unique channel region that has at least five planar surfaces. Additionally, his patent on a method of manufacturing field effect transistors using sacrificial blocking layers focuses on creating a more stable semiconductor integrated circuit device. This method involves a systematic process of forming blocking layers, insulating layers, and source/drain regions to enhance manufacturability and performance.

Career Highlights

Yoo’s career at Samsung Electronics Co., Ltd. has been marked by his dedication to advancing semiconductor technology. His innovative approaches and patented methods have not only contributed to the company’s success but have also set new standards in the industry. His extensive experience and technical acumen in the field have earned him recognition and respect among peers.

Collaborations

Throughout his career, Jae-Yoon Yoo has collaborated with other talented inventors, including Seung-Hwan Lee and Hwa-Sung Rhee. These partnerships have fostered a creative environment that facilitates groundbreaking advancements in semiconductor technology, showcasing the power of teamwork in innovation.

Conclusion

Jae-Yoon Yoo stands out as a prominent figure in semiconductor innovation. With his 14 patents and a strong commitment to advancing technology at Samsung Electronics Co., Ltd., he continues to shape the future of the industry. As his work progresses, the impact of his inventions will undoubtedly be felt for years to come.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…