The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2006
Filed:
Mar. 05, 2004
Hwa-sung Rhee, Seongnam-si, KR;
Jae-yoon Yoo, Seoul, KR;
Ho Lee, Gyeonggi-do, KR;
Seung-hwan Lee, Seoul, KR;
Byou-ree Lim, Yongin, KR;
Hwa-sung Rhee, Seongnam-si, KR;
Jae-yoon Yoo, Seoul, KR;
Ho Lee, Gyeonggi-do, KR;
Seung-hwan Lee, Seoul, KR;
Byou-ree Lim, Yongin, KR;
Abstract
A method of manufacturing a bipolar device including pre-treatment using germane gas and a bipolar device manufactured by the same. The method includes forming a single crystalline silicon layer for a base region on a collector region; and forming a polysilicon layer for an emitter region thereon. Here, before the polysilicon layer is formed, the single crystalline silicon layer is pre-treated using germane gas. Thus, an oxide layer is removed from the single crystalline silicon layer, and a germanium layer is formed on the single crystalline silicon layer, thus preventing Si-rearrangement.