Byou-ree Lim

Title: Byou-ree Lim: Innovator in Non-volatile Memory Technology

Introduction

Byou-ree Lim, an accomplished inventor based in Yongin-si, South Korea, has made significant contributions to the field of semiconductor technology, particularly in non-volatile memory devices. With a total of four patents to his name, Lim's work embodies innovation and technical excellence, propelling advancements within the technology sector.

Latest Patents

Lim's most recent innovations include a groundbreaking patent for a non-volatile memory device and its associated fabrication method. This device is characterized by an asymmetric channel structure, comprising a semiconductor substrate with a source region and drain region doped with n-type impurities. The innovative trapping structure features a tunneling layer and a charge trapping layer that efficiently traps tunneled charge carriers. Notably, it includes a gate insulating layer and a gate electrode, facilitating advanced performance characteristics between the various channel regions.

Additionally, Lim has developed a non-volatile memory cell array employing common drain lines, along with a specific method for operating the same. This method enhances programming efficiency through a carefully orchestrated application of varying voltage levels across selected memory cells, further showcasing Lim's innovative approach to enhancing non-volatile memory technology.

Career Highlights

Byou-ree Lim is a key contributor at Samsung Electronics Co., Ltd., where his expertise plays a vital role in shaping the company's advancements in semiconductor solutions. His career at Samsung has been marked by a dedication to developing cutting-edge technologies that meet the needs of modern computing.

Collaborations

Throughout his career, Lim has worked alongside notable colleagues, including Jae-Yoon Yoo and In-Wook Cho. These collaborations have fostered a stimulating environment for innovation and have allowed for the successful development of groundbreaking technologies within the semiconductor industry.

Conclusion

Byou-ree Lim stands as a prominent figure in the realm of non-volatile memory technology. His recent patents not only demonstrate his inventive genius but also signify the ongoing evolution and enhancement of memory devices that are crucial in today's technology-driven world. As he continues his work at Samsung Electronics, Lim remains at the forefront of innovation, driving advancements that will undoubtedly shape the future of computing.