The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Apr. 30, 2008
Hwa-sung Rhee, Gyeonggi-do, KR;
Hyun-suk Kim, Gyeonggi-do, KR;
Ueno Tetsuji, Gyeonggi-do, KR;
Jae-yoon Yoo, Seoul, KR;
Seung-hwan Lee, Seoul, KR;
Ho Lee, Gyeonggi-do, KR;
Moon-han Park, Gyeonggi-do, KR;
Hwa-Sung Rhee, Gyeonggi-do, KR;
Hyun-Suk Kim, Gyeonggi-do, KR;
Ueno Tetsuji, Gyeonggi-do, KR;
Jae-Yoon Yoo, Seoul, KR;
Seung-Hwan Lee, Seoul, KR;
Ho Lee, Gyeonggi-do, KR;
Moon-han Park, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.