The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2013
Filed:
Sep. 08, 2011
Ha-jin Lim, Seoul, KR;
Moon-han Park, Yongin-si, KR;
Min-woo Song, Seongnam-si, KR;
Jin-ho DO, Hwaseong-si, KR;
Weon-hong Kim, Suwon-si, KR;
Moon-kyun Song, Anyang-si, KR;
Dae-kwon Joo, Osan-si, KR;
Ha-Jin Lim, Seoul, KR;
Moon-Han Park, Yongin-si, KR;
Min-Woo Song, Seongnam-si, KR;
Jin-Ho Do, Hwaseong-si, KR;
Weon-Hong Kim, Suwon-si, KR;
Moon-Kyun Song, Anyang-si, KR;
Dae-Kwon Joo, Osan-si, KR;
Abstract
A method of forming agate structure having an improved electric characteristic is disclosed. A gate insulating layer is formed on a substrate and a metal layer is formed on the gate insulating layer. Then, an amorphous silicon layer is formed on the metal layer by a physical vapor deposition (PVD) process. An impurity doped polysilicon layer is formed on the amorphous silicon layer. Formation of an oxide layer at an interface between the amorphous silicon layer and the metal layer may be prevented.