The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Mar. 12, 2012
Moon-kyun Song, Gyeonggi-do, KR;
Ha-jin Lim, Seoul, KR;
Moon-han Park, Gyeonggi-do, KR;
Jin-ho DO, Gyeonggi-do, KR;
Moon-kyun Song, Gyeonggi-do, KR;
Ha-jin Lim, Seoul, KR;
Moon-han Park, Gyeonggi-do, KR;
Jin-ho Do, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Methods of manufacturing semiconductor devices include providing a substrate including a NMOS region and a PMOS region, implanting fluorine ions into an upper surface of the substrate, forming a first gate electrode of the NMOS region and a second gate electrode of the PMOS region on the substrate, forming a source region and a drain region in portions of the substrate, which are adjacent to two lateral surfaces of the first gate electrode and the second gate electrode, respectively, and performing a high-pressure heat-treatment process on an upper surface of the substrate by using non-oxidizing gas.