The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Jul. 17, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Dong-woo Kang, Ansan-si, KR;
Ji-ho Yoo, Seongnam-si, KR;
Dong-hoon Khang, Daegu, KR;
Seon-bae Kim, Hwaseong-si, KR;
Moon-han Park, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
To manufacture an integrated circuit device, a diffusion buffer layer and a carbon-containing layer are sequentially formed on a plurality of fin-type active regions formed in a substrate. A carbon-containing mask pattern is formed to have an opening exposing a portion of the diffusion buffer layer by etching the carbon-containing layer using an etching gas including an oxygen atom while the diffusion buffer layer is blocking oxygen from diffusing into the fin-type active regions. Impurity ions are implanted into some fin-type active regions through the opening and the diffusion buffer layer using the carbon-containing mask pattern as an ion-implantation mask, the some fin-type active regions being selected from among the plurality of fin-type active regions.