The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2003
Filed:
May. 12, 2000
Tai-su Park, Kyungki-do, KR;
Moon-han Park, Kyungki-do, KR;
Kyung-won Park, Kyungki-do, KR;
Han-sin Lee, Kyungki-do, KR;
Jung-yup Kim, Kyungki-do, KR;
Chang-ki Hong, Kyungki-do, KR;
Ho-kyu Kang, Kyungki-do, KR;
Abstract
Trench isolation methods for integrated circuits may reduce irregularities in the formation of an isolation layer through use of a high selectivity chemical-mechanical polishing (CMP) operation. In particular, a substrate surface is etched to form a trench. An insulation layer is then formed on the substrate surface and in the trench. The insulation layer is chemical-mechanical polished using a slurry that includes a CeO group abrasive to form an isolation layer in the trench. The CMP selectivity ratio of a slurry that includes a CeO group abrasive may be sufficient to allow the substrate surface to be used as a CMP stop. As a result, a more consistent level of polishing may be maintained over the substrate surface, which may result in a more uniform thickness in the isolation layer.