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For the Inventor, By the Inventor

Suwon, South Korea

Kyung-won Park

USPTO Granted Patents = 10

Average Co-Inventor Count = 4.1

ph-index = 7

Forward Citations = 102(Granted Patents)


Location History:

  • Kyungki-do, KR (2001 - 2003)
  • Suwon, KR (2002 - 2003)
  • Kyunggi-do, KR (2004)

Company Filing History:

goldMedal10 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2001-2004

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10 patents (USPTO):
1. 6699799 - Method of forming a semiconductor device (2004-03-02),
2. 6645866 - Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing step (2003-11-11),
3. 6627514 - Semiconductor device having a Y-shaped isolation layer and simplified method for manufacturing the Y-shaped isolation layer to prevent divot formation (2003-09-30),
4. 6573168 - Methods for forming conductive contact body for integrated circuits using dummy dielectric layer (2003-06-03),
5. 6537914 - Integrated circuit device isolation methods using high selectivity chemical-mechanical polishing (2003-03-25),
6. 6511888 - Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing step (2003-01-28),
7. 6465866 - Trench isolation regions having trench liners with recessed ends (2002-10-15),
8. 6429107 - Method for forming conductive contact of semiconductor device (2002-08-06),
9. 6331469 - Trench isolation structure, semiconductor device having the same, and trench isolation method (2001-12-18),
10. 6258726 - Method of forming isolation film for semiconductor devices (2001-07-10),

Title: Kyung-won Park: Innovator in Semiconductor Technology

Introduction

Kyung-won Park is a prominent inventor based in Suwon, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His innovative approaches have advanced the methods used in semiconductor device fabrication.

Latest Patents

Kyung-won Park's latest patents include a method of forming a semiconductor device. This method involves conformally stacking a liner on a semiconductor substrate before coating an SOG layer. The SOG layer is cured in an ambient of oxygen radicals formed at a temperature of 1000°C or higher when oxygen and hydrogen are supplied. The oxygen radicals are generated by irradiating ultraviolet rays to ozone or forming oxygen plasma. Additionally, he has developed a method of fabricating a semiconductor device using a trench isolation method that includes a hydrogen annealing step. This process involves forming a photoresist pattern on a semiconductor substrate, etching the substrate to create a trench, and then forming an isolation layer within that trench. To mitigate damages in the active region defined by the isolation layer, the substrate is annealed in a hydrogen atmosphere.

Career Highlights

Kyung-won Park is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in enhancing the efficiency and reliability of semiconductor devices.

Collaborations

Throughout his career, Kyung-won Park has collaborated with notable colleagues, including Tai-su Park and Han-sin Lee. These collaborations have fostered a dynamic environment for innovation and development in their field.

Conclusion

Kyung-won Park's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a leading inventor in the industry. His innovative methods are paving the way for future advancements in semiconductor devices.

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