The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2003
Filed:
Dec. 16, 2002
Applicant:
Inventors:
Tai-su Park, Suwon, KR;
Kyung-won Park, Suwon, KR;
Jung-woo Park, Seoul, KR;
Won-sang Song, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ; H01L 2/1302 ; H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/176 ; H01L 2/1302 ; H01L 2/131 ;
Abstract
A method of fabricating a semiconductor device using a trench isolation method including a hydrogen annealing step, wherein a photoresist pattern is formed on a semiconductor substrate, a pad insulating layer may be formed before forming the photoresist pattern, the semiconductor substrate is etched using the photoresist pattern as an etching mask to form a trench, and an isolation layer is formed in the trench. To remove damages created in an active region defined by the isolation layer, the semiconductor substrate having the isolation layer is annealed in a hydrogen atmosphere.