logo

For the Inventor, By the Inventor

Seoul, South Korea

Won-sang Song

This inventor holds 13 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2002-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Won-sang Song. Retrieved from https://idiyas.com/inventor/won-sang-song

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13

% Patents Active = 84.6

Average Co-Inventor Count = 4.3

ph-index = 6

Forward Citations = 77(Granted Patents)


Company Filing History:

goldMedal13 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2002-2011

Loading Chart...
13 patents (USPTO):Explore Patents
1. 7951712 - Interconnections having double capping layer and method for forming the same (2011-05-31),
2. 7605472 - Interconnections having double capping layer and method for forming the same (2009-10-20),
3. 7205666 - Interconnections having double capping layer and method for forming the same (2007-04-17),
4. 7037835 - Interconnections having double capping layer and method for forming the same (2006-05-02),
5. 6881630 - Methods for fabricating field effect transistors having elevated source/drain regions (2005-04-19),
6. 6842028 - Apparatus for testing reliability of interconnection in integrated circuit (2005-01-11),
7. 6740587 - Semiconductor device having a metal silicide layer and method for manufacturing the same (2004-05-25),
8. 6693446 - Apparatus for testing reliability of interconnection in integrated circuit (2004-02-17),
9. 6690187 - Apparatus for testing reliability of interconnection in integrated circuit (2004-02-10),
10. 6645866 - Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing step (2003-11-11),
11. 6580134 - Field effect transistors having elevated source/drain regions (2003-06-17),
12. 6511888 - Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing step (2003-01-28),
13. 6451691 - Methods of manufacturing a metal pattern of a semiconductor device which include forming nitride layer at exposed sidewalls of Ti layer of the pattern (2002-09-17),

Title: The Innovative Contributions of Won-sang Song

Introduction

Won-sang Song is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is titled "Interconnections having double capping layer and method for forming the same." This invention provides an interconnection of a semiconductor device that includes a capping layer and a method for forming the interconnection. The interconnection is a copper damascene type, where the capping layer is formed as a dual layer of silicon nitride and silicon carbide on a copper layer processed by chemical mechanical polishing (CMP). This innovative approach allows for high etching selectivity and a low dielectric constant of the silicon carbide layer, while also providing superior leakage suppression.

Career Highlights

Won-sang Song is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in the development of advanced semiconductor technologies.

Collaborations

Throughout his career, Won-sang has collaborated with notable colleagues, including Jung-Woo Park and Kyoung-woo Lee. These collaborations have further enhanced the innovative capabilities within his projects.

Conclusion

Won-sang Song's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…