IDiyas

For the Inventor, By the Inventor

Seoul, South Korea

Won-sang Song

USPTO Granted Patents = 13

Average Co-Inventor Count = 4.3

ph-index = 6

Forward Citations = 77(Granted Patents)


Company Filing History:

goldMedal13 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2002-2011

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13 patents (USPTO):
1. 7951712 - Interconnections having double capping layer and method for forming the same (2011-05-31),
2. 7605472 - Interconnections having double capping layer and method for forming the same (2009-10-20),
3. 7205666 - Interconnections having double capping layer and method for forming the same (2007-04-17),
4. 7037835 - Interconnections having double capping layer and method for forming the same (2006-05-02),
5. 6881630 - Methods for fabricating field effect transistors having elevated source/drain regions (2005-04-19),
6. 6842028 - Apparatus for testing reliability of interconnection in integrated circuit (2005-01-11),
7. 6740587 - Semiconductor device having a metal silicide layer and method for manufacturing the same (2004-05-25),
8. 6693446 - Apparatus for testing reliability of interconnection in integrated circuit (2004-02-17),
9. 6690187 - Apparatus for testing reliability of interconnection in integrated circuit (2004-02-10),
10. 6645866 - Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing step (2003-11-11),
11. 6580134 - Field effect transistors having elevated source/drain regions (2003-06-17),
12. 6511888 - Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing step (2003-01-28),
13. 6451691 - Methods of manufacturing a metal pattern of a semiconductor device which include forming nitride layer at exposed sidewalls of Ti layer of the pattern (2002-09-17),
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