The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Feb. 28, 2001
Won-Sang Song, Seoul, KR;
In-Sun Park, Gyeonggi-do, KR;
Kyung-Bum Koo, Gyeonggi-do, KR;
Young-Cheon Kim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method of manufacturing a metal pattern of a semiconductor device. A Ti layer and a metal layer are successively formed on a semiconductor substrate or on an insulating layer. Then, a wiring pattern including a Ti layer pattern and a metal layer pattern is formed by patterning said Ti layer and the metal layer. Heat treating is employed under an atmosphere of a compound including nitrogen in order to react an exposed portion of the Ti layer pattern to form TiN as a main product, thereby increasing the stability and adhesiveness of the metal layer for subsequent processes.