The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Sep. 12, 2001
Won-Sang Song, Seoul, KR;
Jeong-Hwan Yang, Suwon-si, KR;
In-Sun Park, Suwon-si, KR;
Byoung-Moon Yoon, Suwon-si, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
The present invention provides a semiconductor device having a metal suicide layer and a method for forming the metal silicide layer, the semiconductor device having a metal silicide-semiconductor contact structure, wherein the semiconductor device includes a substrate, an insulation layer with an opening, in which a metal silicide layer is formed using a native metal silicide with a first phase and a second phase, upon which a conductive layer is formed. The second phase has a first stoichiometrical composition ratio different from a second stoichiometrical composition ratio of the first phase. A reaction between the metal silicide layer of the first phase and the silicon results in the metal silicide layer of the second phase having high phase stability and low resistance.