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Suwon, South Korea

Jeong-Hwan Yang

This inventor holds 10 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2004-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeong-Hwan Yang. Retrieved from https://idiyas.com/inventor/jeong-hwan-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10

% Patents Active = 80.0

Average Co-Inventor Count = 1.4

ph-index = 3

Forward Citations = 84(Granted Patents)


Location History:

  • Yongin-si, KR (2006 - 2007)
  • Suwon-si, KR (2004 - 2012)

Company Filing History:

goldMedal10 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2004-2012

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10 patents (USPTO):Explore Patents
1. 8159006 - Semiconductor device having a triple gate transistor and method for manufacturing the same (2012-04-17),
2. 7932154 - Method of fabricating non-volatile flash memory device having at least two different channel concentrations (2011-04-26),
3. 7550332 - Non-planar transistor having germanium channel region and method of manufacturing the same (2009-06-23),
4. 7320920 - Non-volatile flash memory device having at least two different channel concentrations and method of fabricating the same (2008-01-22),
5. 7288810 - Nonvolatile semiconductor memory device having double floating gate structure and method of manufacturing the same (2007-10-30),
6. 7227175 - Semiconductor device with different lattice properties (2007-06-05),
7. 7214993 - Non-planar transistor having germanium channel region and method of manufacturing the same (2007-05-08),
8. 7151019 - Method of manufacturing a semiconductor device with different lattice properties (2006-12-19),
9. 7129517 - Semiconductor device with different lattice properties (2006-10-31),
10. 6740587 - Semiconductor device having a metal silicide layer and method for manufacturing the same (2004-05-25),

Title: Jeong-Hwan Yang: Innovator in Semiconductor Technology

Introduction

Jeong-Hwan Yang is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is for a semiconductor device featuring a triple gate transistor and a method for manufacturing it. This invention aims to reduce Negative Bias Temperature Instability (NBTI) in multi-gate transistors. The design includes an active region with top and side surfaces oriented in a specific direction, along with gate dielectric and channels formed within the active region. Another notable patent involves a method for fabricating a non-volatile flash memory device that incorporates at least two different channel concentrations. This device consists of a semiconductor substrate with a source and drain region, along with a series of stacked layers that enhance its functionality.

Career Highlights

Jeong-Hwan Yang is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of modern electronic devices.

Collaborations

He has collaborated with notable coworkers, including Sang-Su Kim and Sung-Taeg Kang, contributing to various projects that push the boundaries of semiconductor research.

Conclusion

Jeong-Hwan Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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