The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Nov. 10, 2000
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A semiconductor device having a Y-shaped isolation layer and a method for manufacturing the same are provided. The semiconductor device includes a Y-shaped isolation layer, which comprises side walls characterized by first and second slopes on the sides of the isolation layer. The method for manufacturing the isolation layer includes the step of forming a trench in a semiconductor substrate using a photoresist pattern as an etching mask. Next, a thermal oxide film is formed on the surface of the semiconductor substrate, and then a thin nitride liner is formed on the thermal oxide film. The nitride liner prevents oxidation of the side wall of the trench and also acts as a planarization stop layer. Thereafter, a gap-filling isolation layer is formed to fill the trench such that the nitride liner is separated or thinner at the upper corners of the trench. Next, the gap-filling isolation layer is planarized using the nitride liner as a planarization stop layer. The nitride liner used as the planarization stop layer is removed. According to the present invention, formation of a divot at the boundary between an isolation region and an active region can be prevented.