The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Sep. 30, 2011
Ha-jin Lim, Seoul, KR;
Moon-han Park, Yongin-si, KR;
Eun-gon Kim, Hwaseong-si, KR;
Jin-ho DO, Yongin-si, KR;
Weon-hong Kim, Suwon-si, KR;
Moon-kyun Song, Anyang-si, KR;
Dae-kwon Joo, Osan-si, KR;
Ha-Jin Lim, Seoul, KR;
Moon-Han Park, Yongin-si, KR;
Eun-Gon Kim, Hwaseong-si, KR;
Jin-Ho Do, Yongin-si, KR;
Weon-Hong Kim, Suwon-si, KR;
Moon-Kyun Song, Anyang-si, KR;
Dae-Kwon Joo, Osan-si, KR;
Samsung Electronic Co., Ltd., , KR;
Abstract
There is provided a method of manufacturing a semiconductor device. In the method, a gate insulation layer including a high-k dielectric material is formed on a substrate. An etch stop layer is formed on the gate insulation layer. A metal layer is formed on the etch stop layer. A hard mask including amorphous silicon is formed on the metal layer. The metal layer is patterned using the hard mask as an etching mask to form a metal layer pattern.