Mohamad Towfik Krounbi

This inventor holds 93 USPTO granted patents and 1 published patent application and 2 EPO patents, primarily in Magnetic Junctions (CPC class H01L43-08). Top assignees: International Business Machines Corporation, Samsung Electronics Co., Ltd., Western Digital (Fremont), Inc.. Active years: 1986-2022.

USPTO Granted Patents = 93 (Patent Applications = 1)

% Patents Active = 79.6

EPO Patents = 2 (Patent Applications = 2)

Average Co-Inventor Count = 3.3

ph-index = 31

Forward Citations = 3,888(Granted Patents)

Forward Citations (Not Self Cited) = 3,850(Dec 10, 2025)

Inventors with similar research interests:

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Company Filing History:

36 out of 166,159

International Business Machines Corporation

patents

30 out of 132,107

Samsung Electronics Co., Ltd.

patents

15 out of 728

Western Digital (Fremont), Inc.

patents

4. 6 out of 2,636

Hitachi Global Storage Technologies Netherlands B.v.

patents

5. 2 out of 5,419

Western Digital Technologies, Inc.

Hitachi Global Technologies

patents

8. 1 out of 44

Samsung Semiconductor Inc.

patents

9. 1 out of 834,307

Other

patents

Years Active: 1986-2022

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Areas of Expertise:

Magnetic Junctions

Spin Transfer Torque

Magnetic Memory

Oxide Layers

Crystallization Temperature

Quantum Computing

Magnetoresistive Read Heads

High Density Writing

Bias Structures

Capping Layers

Thermally Assisted Switching

Insertion Layers

93 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11251366 - Oxide interlayers containing glass-forming agents (2022-02-15),

2. 11063209 - Method and system for providing magnetic junctions utilizing oxygen blocking, oxygen adsorber and tuning layer(s) (2021-07-13),

3. 11009570 - Hybrid oxide/metal cap layer for boron-free free layer (2021-05-18),

4. 10553642 - Method and system for providing magnetic junctions utilizing metal oxide layer(s) (2020-02-04),

5. 10446209 - Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements (2019-10-15),

6. 10438638 - Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer or spin orbit torque applications using a sacrificial oxide layer (2019-10-08),

7. 10297301 - Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s) (2019-05-21),

8. 10283701 - Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions (2019-05-07),

9. 10276225 - Method and system for providing a magnetic junction usable in spin transfer or spin-orbit torque applications and including a magnetic barrier layer (2019-04-30),

10. 10170690 - Hybrid-fl with edge-modified coupling (2019-01-01),

11. 10164175 - Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions (2018-12-25),

12. 10062732 - DMTJ structure for sub-25NM designs with cancelled flowering field effects (2018-08-28),

13. 9972773 - Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s) (2018-05-15),

14. 9966528 - Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer torque applications using a sacrificial oxide layer (2018-05-08),

15. 9941467 - Method and system for providing a low moment CoFeBMo free layer magnetic junction usable in spin transfer torque applications (2018-04-10),

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