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For the Inventor, By the Inventor

San Jose, CA, United States of America

Mohamad Towfik Krounbi

USPTO Granted Patents = 93 

 

Average Co-Inventor Count = 3.3

ph-index = 31

Forward Citations = 3,885(Granted Patents)

Forward Citations (Not Self Cited) = 3,850(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal36 out of 164,135 
 
International Business Machines Corporation
 patents
silverMedal30 out of 131,324 
 
Samsung Electronics Co., Ltd.
 patents
bronzeMedal15 out of 728 
 
Western Digital (fremont), Inc.
 patents
4. 6 out of 2,636 
 
Hitachi Global Storage Technologies Netherlands B.v.
 patents
5. 2 out of 5,311 
 
Western Digital Technologies, Inc.
 patents
6. 1 out of 99 
 
Grandis, Inc.
 patents
7. 1 out of 5 
 
Hitachi Global Technologies
 patents
8. 1 out of 44 
 
Samsung Semiconductor Inc.
 patents
9. 1 out of 832,718 
Other
 patents

Years Active: 1986-2022

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Areas of Expertise:
Magnetic Junctions
Spin Transfer Torque
Magnetic Tunneling Junctions
Quantum Computing
Magnetoresistive Read Heads
High Density Writing
Magnetic Memories
Oxide Interlayers
Thermally Assisted Switching
Bias Structures
GMR Sensors
Magnetic Barrier Layers
93 patents (USPTO):Explore Patents
1. 11251366 - Oxide interlayers containing glass-forming agents (2022-02-15),
2. 11063209 - Method and system for providing magnetic junctions utilizing oxygen blocking, oxygen adsorber and tuning layer(s) (2021-07-13),
3. 11009570 - Hybrid oxide/metal cap layer for boron-free free layer (2021-05-18),
4. 10553642 - Method and system for providing magnetic junctions utilizing metal oxide layer(s) (2020-02-04),
5. 10446209 - Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements (2019-10-15),
6. 10438638 - Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer or spin orbit torque applications using a sacrificial oxide layer (2019-10-08),
7. 10297301 - Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s) (2019-05-21),
8. 10283701 - Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions (2019-05-07),
9. 10276225 - Method and system for providing a magnetic junction usable in spin transfer or spin-orbit torque applications and including a magnetic barrier layer (2019-04-30),
10. 10170690 - Hybrid-fl with edge-modified coupling (2019-01-01),
11. 10164175 - Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions (2018-12-25),
12. 10062732 - DMTJ structure for sub-25NM designs with cancelled flowering field effects (2018-08-28),
13. 9972773 - Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s) (2018-05-15),
14. 9966528 - Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer torque applications using a sacrificial oxide layer (2018-05-08),
15. 9941467 - Method and system for providing a low moment CoFeBMo free layer magnetic junction usable in spin transfer torque applications (2018-04-10),

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