The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2019

Filed:

Feb. 06, 2018
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Ikhtiar, Milpitas, CA (US);

Xueti Tang, Fremont, CA (US);

Mohamad Towfik Krounbi, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 27/12 (2006.01); H01F 10/10 (2006.01); H01F 41/14 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G11C 11/161 (2013.01); H01F 10/10 (2013.01); H01F 41/14 (2013.01); H01L 27/1222 (2013.01); H01L 43/08 (2013.01);
Abstract

A magnetic junction and method for providing the magnetic junction are described. The method includes providing a pinned layer, a nonmagnetic spacer layer and a free layer switchable between stable magnetic states. The nonmagnetic spacer layer is between the pinned and free layers. Providing the pinned layer and/or providing the free layer includes cooling a portion of the magnetic junction, depositing a wetting layer while the portion of the magnetic junction is cooled, oxidizing/nitriding the wetting layer and depositing a boron-free magnetic layer on the oxide/nitride wetting layer. The portion of the magnetic junction is cooled to within a temperature range including temperature(s) not greater than 250 K. The wetting layer has a thickness of at least 0.25 and not more than three monolayers. The wetting layer includes at least one magnetic material. The boron-free magnetic layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy.


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