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For the Inventor, By the Inventor

Fremont, CA, United States of America

Xueti Tang

USPTO Granted Patents = 46 

 

Average Co-Inventor Count = 3.3

ph-index = 7

Forward Citations = 259(Granted Patents)


Location History:

  • San Jose, CA (US) (2014 - 2016)
  • Fremont, CA (US) (2013 - 2022)

Company Filing History:

goldMedal39 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal6 out of 99 
 
Grandis, Inc.
 patents
bronzeMedal1 out of 44 
 
Samsung Semiconductor Inc.
 patents

Years Active: 2013-2022

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Areas of Expertise:
Magnetic Junctions
Spin Transfer Torque
Perpendicular Magnetic Anisotropy
Magnetic Tunneling Junctions
Cobalt-Free Free Layers
Thermally Assisted Switching
Asymmetric Free Layers
Hybrid Oxide Layers
Magnetic Random Access Memory
Engineered Barrier Layers
Sacrificial Oxide Layers
Boron-Free Magnetic Layers
46 patents (USPTO):Explore Patents
1. 11348715 - Semiconductor device and method of making the same (2022-05-31),
2. 11251366 - Oxide interlayers containing glass-forming agents (2022-02-15),
3. 11063209 - Method and system for providing magnetic junctions utilizing oxygen blocking, oxygen adsorber and tuning layer(s) (2021-07-13),
4. 11009570 - Hybrid oxide/metal cap layer for boron-free free layer (2021-05-18),
5. 10553642 - Method and system for providing magnetic junctions utilizing metal oxide layer(s) (2020-02-04),
6. 10446209 - Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements (2019-10-15),
7. 10439133 - Method and system for providing a magnetic junction having a low damping hybrid free layer (2019-10-08),
8. 10438638 - Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer or spin orbit torque applications using a sacrificial oxide layer (2019-10-08),
9. 10431275 - Method and system for providing magnetic junctions having hybrid oxide and noble metal capping layers (2019-10-01),
10. 10283701 - Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions (2019-05-07),
11. 10276225 - Method and system for providing a magnetic junction usable in spin transfer or spin-orbit torque applications and including a magnetic barrier layer (2019-04-30),
12. 10164175 - Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions (2018-12-25),
13. 10121961 - Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque (2018-11-06),
14. 9966528 - Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer torque applications using a sacrificial oxide layer (2018-05-08),
15. 9941467 - Method and system for providing a low moment CoFeBMo free layer magnetic junction usable in spin transfer torque applications (2018-04-10),

Title: Xueti Tang - Innovator from Fremont, CA

Introduction: Xueti Tang is a renowned inventor based in Fremont, California, known for his groundbreaking contributions to various technological fields.

Latest Patents: Xueti Tang holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Xueti Tang has worked with leading tech companies, research institutions, and universities, consistently pushing the boundaries of innovation and technology.

Collaborations: Throughout his career, Xueti Tang has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge sharing in the industry.

Conclusion: Xueti Tang's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and entrepreneurs worldwide.

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