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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11348715 B1

PDFFull Text
Date of Patent:
May. 31, 2022

Filed:

Aug. 08, 2019

Semiconductor device and method of making the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hong Sik Jung, Newark, CA (US);

Xueti Tang, Fremont, CA (US);

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Lewis Roca Rothgerber Christie LLP

Primary Examiner:

Xiaoming Liu

Int. Cl.
CPC ...
H01F 10/32 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01F 41/32 (2006.01);
U.S. Cl.
CPC ...
H01F 10/3259 (2013.01); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H01F 41/32 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A perpendicular bottom-free-layer STT-MRAM cell includes a bottom-free-layer magnetic tunnel junction (BMTJ). The BMTJ includes a composite metal oxide seed layer, and a free layer comprising boron (B) on the composite metal oxide seed layer. The composite metal oxide seed layer includes a first metal layer; a metal oxide layer on the first metal layer; and a second metal layer on the metal oxide layer. The second metal layer has been oxygen treated.

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Jung, Hong. (2022). Semiconductor device and method of making the same (U.S. Patent No. 11348715). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11348715

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