The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 10, 2018

Filed:

Nov. 29, 2016
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Xueti Tang, Fremont, CA (US);

Mohamad Towfik Krounbi, San Jose, CA (US);

Donkoun Lee, San Jose, CA (US);

Gen Feng, North Potomac, MD (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/20 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); G11C 11/16 (2006.01); H01L 41/00 (2013.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); H01L 27/20 (2013.01); H01L 27/22 (2013.01); H01L 27/228 (2013.01); H01L 41/00 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes a [CoFeB]Molayer, where u+t=1, x+y+z=1 and u, t, x, y and z are each nonzero. The [CoFeB]Molayer has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.


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