The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Oct. 18, 2017
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Don Koun Lee, San Jose, CA (US);
Mohamad Towfik Krounbi, San Jose, CA (US);
Xueti Tang, Fremont, CA (US);
Gen Feng, North Potomac, MD (US);
Ikhtiar, Milpitas, CA (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a M-containing oxide layer adjacent to the free layer. M includes at least one of Ti, Al, Hf, Zr, Mo, V and Nb. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the M-containing oxide layer.