The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Nov. 16, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ikhtiar, San Jose, CA (US);

Xueti Tang, Fremont, CA (US);

Mohamad Krounbi, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/09 (2006.01); H01F 10/32 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01F 41/30 (2006.01);
U.S. Cl.
CPC ...
G01R 33/098 (2013.01); H01F 10/3286 (2013.01); H01F 10/3295 (2013.01); H01F 41/307 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic tunnel junction stack includes: a pinned layer; a main oxide barrier layer on the pinned layer; a free layer on the main oxide barrier layer; and a hybrid oxide/metal cap layer on the free layer. The hybrid oxide/metal cap layer includes: a first oxide layer on the free layer; a second oxide layer on the first oxide layer; and a metallic cap layer on the second oxide layer, wherein the free layer is free of boron (B).


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