For the Inventor, By the Inventor

Enter assignee name

Milpitas, CA, United States of America

Grandis, Inc.

USPTO Granted Patents = 99

% Expired Patents = 12.1

EPO Patents = 11

Forward Citations = 8,122

Loading Chart...

Loading Chart...

36 inventors (with patents filed for the assignee):

Yiming Huai (56 out of 190 patents)

Paul Phong Nguyen (23 out of 50 patents)

Eugene Youjun Chen (22 out of 74 patents)

4. Zhitao Diao (18 out of 43 patents)

5. Dmytro Apalkov (14 out of 81 patents)

6. Mahendra Pakala (9 out of 74 patents)

7. Adrian E Ong (9 out of 118 patents)

8. Lien-Chang Wang (7 out of 33 patents)

9. Frank Albert (7 out of 7 patents)

10. Xueti Tang (6 out of 46 patents)

11. Yunfei Ding (6 out of 45 patents)

12. Vladimir Nikitin (5 out of 116 patents)

13. Steven M Watts (5 out of 11 patents)

14. Xiao Luo (5 out of 6 patents)

15. Zhanjie Li (4 out of 82 patents)

Core Competencies:

Spin Transfer Torque

Magnetic Tunneling Junctions

Memory Error Correction

Magnetic Anisotropy

MRAM Devices

Current Driven Memory

Magnetic Shielding

Memory Architecture

Probabilistic Switching

Dynamic Multistate Memory

Magnetic Elements

Spintronics

99 patents: Sort by Forward Citations

1. 11260036 - [18F]-labelled lactate derivative as PET radiotracer (2022-03-01),

2. 10799470 - [F]-labelled lactate derivative as pet radiotracer (2020-10-13),

3. 9099181 - Non-volatile static ram cell circuit and timing method (2015-08-04),

4. 8913350 - Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements (2014-12-16),

5. 8825442 - Probabilistic switching determination for electrical devices (2014-09-02),

6. 8723557 - Multi-supply symmetric driver circuit and timing method (2014-05-13),

7. 8642358 - Method for fabricating magnetic tunnel junction device (2014-02-04),

8. 8625339 - Multi-cell per memory-bit circuit and method (2014-01-07),

9. 8546896 - Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements (2013-10-01),

10. 8476723 - Magnetic element having low saturation magnetization (2013-07-02),

11. 8456926 - Memory write error correction circuit (2013-06-04),

12. 8456898 - Magnetic element having perpendicular anisotropy with enhanced efficiency (2013-06-04),

13. 8456882 - Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories (2013-06-04),

14. 8446761 - Method and system for providing multiple logic cells in a single stack (2013-05-21),

15. 8432009 - Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories (2013-04-30),

Grandis, Inc. is a cutting-edge technology company specializing in advanced materials and systems. Our focus is on developing innovative magnetic random-access memory (MRAM) solutions for a wide range of industries. With our state-of-the-art research and development facilities, we strive to create high-performance, low-power memory technologies that revolutionize data storage and processing. Visit our website to learn more about our groundbreaking MRAM solutions and how they can benefit your business.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 15 2026

99 Patents

#28 in Milpitas, CA

#880 in California

#3,817 in US

#7,835 in the World

Milpitas, CA, United States of America

Grandis, Inc.

Forward Citations = 8,122

36 inventors:

Yiming Huai (56 out of 190 patents)

Paul Phong Nguyen (23 out of 50 patents)

Eugene Youjun Chen (22 out of 74 patents)

4. Zhitao Diao (18 out of 43 patents)

5. Dmytro Apalkov (14 out of 81 patents)

Please report any incorrect information to [email protected]

Loading…