The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Dec. 08, 2011
Applicant:
Min Suk Lee, Seongnam-si, KR;
Inventor:
Min Suk Lee, Seongnam-si, KR;
Assignees:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Grandis, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes forming a plurality of layers which are stacked as a bottom layer, an MTJ layer, and a top layer, patterning the top layer and the MTJ layer using an etch mask pattern to form a top layer pattern and an MTJ pattern, forming a carbon spacer on the sidewalls of the MTJ pattern and the top layer pattern to protect the MTJ pattern and the top layer pattern, and patterning the bottom layer using the carbon spacer and the etch mask pattern as an etch mask to form a bottom layer pattern.