Dmytro Apalkov

This inventor holds 81 USPTO granted patents and 10 published patent applications and 6 EPO patents, primarily in Spin-Orbit Torque Memory (CPC class H01L43-08). Top assignees: Samsung Electronics Co., Ltd., Grandis, Inc., Renesas Technology Corp.. Active years: 2009-2026.

USPTO Granted Patents = 81 (Patent Applications = 10)

% Patents Active = 81.5

EPO Patents = 6 (Patent Applications = 6)

Average Co-Inventor Count = 2.8

ph-index = 9

Forward Citations = 591(Granted Patents)

Forward Citations (Not Self Cited) = 540(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Milpitas, CA (US) (2009 - 2010)
San Jose, CA (US) (2012 - 2024)

Company Filing History:

66 out of 132,107

Samsung Electronics Co., Ltd.

Renesas Technology Corp.

patents

4. 1 out of 5,708

Samsung Electronics Ltd.

patents

5. 1 out of 328

The University of Alabama

patents

where one patent can have more than one assignee

Years Active: 2009-2026

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Areas of Expertise:

Spin-Orbit Torque

Magnetic Junctions

Race-Track Memory

Magnetoresistive Memory

Memory Devices

Thermally Assisted

Self-Referencing

3D Stackable Memory

Perpendicular Magnetization

Spin-Transfer Torque

Domain Wall Motion

Magnetic Damping

81 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12685029 - Semiconductor device and method of making the same (2026-07-14),

2. 12512137 - Multilayered vertical spin-orbit torque devices (2025-12-30),

3. 12457906 - Spin-orbit torque magnetic random-access memory (SOT-MRAM) device (2025-10-28),

4. 12114578 - Magnetoresistive memory elements for spin-transfer torque (STT) and spin-orbit torque (SOT) random access memories (2024-10-08),

5. 11925124 - Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping (2024-03-05),

6. RE49797 - Vertical spin orbit torque devices (2024-01-09),

7. 11776726 - Dipole-coupled spin-orbit torque structure (2023-10-03),

8. 11348627 - Race-track memory with improved domain wall motion control (2022-05-31),

9. 10885961 - Race-track memory with improved writing scheme (2021-01-05),

10. 10644226 - Method and system for engineering the secondary barrier layer in dual magnetic junctions (2020-05-05),

11. 10585630 - Selectorless 3D stackable memory (2020-03-10),

12. 10573363 - Method and apparatus for performing self-referenced read in a magnetoresistive random access memory (2020-02-25),

13. 10439133 - Method and system for providing a magnetic junction having a low damping hybrid free layer (2019-10-08),

14. 10411184 - Vertical spin orbit torque devices (2019-09-10),

15. 10381550 - Method and system for engineering the secondary barrier layer in dual magnetic junctions (2019-08-13),

Title: Dmytro Apalkov: Innovator in Magnetic Memory Technology

Introduction

Dmytro Apalkov is a prominent inventor based in San Jose, CA (US), known for his significant contributions to the field of magnetic memory technology. With a remarkable portfolio of 81 patents, he has made substantial advancements in the development of spin-orbit torque devices and magnetic random-access memory.

Latest Patents

Among his latest innovations are the multilayered vertical spin-orbit torque devices and the spin-orbit torque magnetic random-access memory (SOT-MRAM) device. The multilayered vertical spin-orbit torque device features a magnetic memory structure that includes a spin-orbit interaction active core with multiple layers and a magnetic junction that surrounds the core. This design enhances the efficiency and performance of magnetic memory applications. The SOT-MRAM device incorporates a substrate, a spin-orbit torque line, and a magnetic tunnel junction, which collectively improve data storage capabilities and speed.

Career Highlights

Dmytro has worked with leading technology companies, including Samsung Electronics and Grandis, Inc. His experience in these organizations has allowed him to refine his expertise in magnetic memory technologies and contribute to groundbreaking innovations in the field.

Collaborations

Throughout his career, Dmytro has collaborated with notable professionals such as Vladimir Nikitin and Alexey Vasilyevitch Khvalkovskiy. These partnerships have fostered a creative environment that has led to the development of advanced technologies in magnetic memory.

Conclusion

Dmytro Apalkov's work in magnetic memory technology exemplifies the impact of innovative thinking in the tech industry. His numerous patents and collaborations highlight his dedication to advancing the field and improving data storage solutions.