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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11925124 B1

PDFFull Text
Date of Patent:
Mar. 05, 2024

Filed:

Mar. 30, 2021

Insertion layers for perpendicularly magnetized heusler layers with reduced magnetic damping

Applicants:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jaewoo Jeong, San Jose, CA (US);

Panagiotis Charilaos Filippou, San Jose, CA (US);

Yari Ferrante, San Jose, CA (US);

Chirag Garg, San Jose, CA (US);

Mahesh Samant, San Jose, CA (US);

Ikhtiar, San Jose, CA (US);

Dmytro Apalkov, San Jose, CA (US);

Assignee:

Samsung Electronics Co., Ltd., Yongin-si, KR;

Attorney:

Lewis Roca Rothgerber Christie LLP

Primary Examiner:

Kevin M Bernatz

Int. Cl.
CPC ...
H10N 50/80 (2023.01); G11C 11/16 (2006.01); H01F 10/193 (2006.01); H01F 10/30 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 11/161 (2013.01); H01F 10/1936 (2013.01); H01F 10/30 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H01F 10/3254 (2013.01); H01F 10/3268 (2013.01);
Abstract

A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.

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