San Jose, CA, United States of America

Mahesh Govind Samant

USPTO Granted Patents = 40 

 

Average Co-Inventor Count = 3.7

ph-index = 9

Forward Citations = 353(Granted Patents)


Location History:

  • Santa Clara, CA (US) (2017)
  • San Jose, CA (US) (2000 - 2024)

Company Filing History:


Years Active: 2000-2025

where 'Filed Patents' based on already Granted Patents

40 patents (USPTO):

Title: Mahesh Govind Samant: A Pioneer in Magnetoresistive Technology.

Introduction

Mahesh Govind Samant is a distinguished inventor based in San Jose, California, known for his significant contributions to the field of magnetoresistive technology. With a remarkable portfolio of 38 patents, he has been at the forefront of innovations that have the potential to revolutionize data storage and processing.

Latest Patents

Among his latest patents, two notable innovations stand out. The first is focused on "Tetragonal half metallic half-Heusler compounds," which describes a magnetoresistive random-access memory (MRAM) cell featuring a templating layer formed from a binary alloy with an alternating layer lattice structure. Additionally, this patent elaborates on the half metallic half-Heusler layer that sits atop this templating layer, possessing distinct lattice properties that enable enhanced performance.

The second patent covers "Magnetic tunneling junction switching with parallel spin-momentum locked spin current." This invention details methods and apparatuses that employ spin transfer torque in MRAM devices, highlighting a unique architecture that includes a substrate, magnetic tunneling junctions (MTJ), and a chiral material layer designed to provide an additional source of spin-transfer torque. This innovation promises lower switching current requirements for MTJ devices, enhancing their efficiency in practical applications.

Career Highlights

Throughout his career, Mahesh has played integral roles at leading companies such as IBM and Samsung Electronics Co., Ltd. His work at these firms has not only advanced their technological capacities but has also contributed significantly to the broader field of electronics and data storage solutions.

Collaborations

Mahesh has collaborated with several eminent researchers in his field, including Jaewoo Jeong and Stuart S. P. Parkin. These partnerships have facilitated groundbreaking advancements in MRAM technologies, showcasing the importance of collaborative efforts in scientific research and development.

Conclusion

Mahesh Govind Samant’s contributions through his numerous patents and collaborations position him as a key figure in the evolution of magnetoresistive memory technologies. His innovative work continues to pave the way for advancements that could reshape the landscape of data storage and processing, thus making lasting impacts in the tech industry.

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