The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

May. 12, 2021
Applicants:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jaewoo Jeong, San Jose, CA (US);

Sergey Faleev, San Jose, CA (US);

Panagiotis Charilaos Filippou, San Jose, CA (US);

Yari Ferrante, San Jose, CA (US);

Stuart Stephen Papworth Parkin, San Jose, CA (US);

Mahesh Samant, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01); G11C 11/16 (2006.01); G11C 19/08 (2006.01); H01F 1/03 (2006.01); H01F 10/193 (2006.01); H01F 10/30 (2006.01); H01F 10/32 (2006.01); H01F 41/30 (2006.01); H10N 50/85 (2023.01); H10N 50/10 (2023.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
G11B 5/3909 (2013.01); G11C 11/161 (2013.01); G11C 11/1675 (2013.01); G11C 19/08 (2013.01); H01F 1/03 (2013.01); H01F 10/1936 (2013.01); H01F 10/30 (2013.01); H01F 10/324 (2013.01); H01F 41/302 (2013.01); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01);
Abstract

A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by AE, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.


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