San Jose, CA, United States of America

Jaewoo Jeong

This inventor holds 40 USPTO granted patents and 18 published patent applications and 8 EPO patents, primarily in Heusler Compounds. Top assignees: Samsung Electronics Co., Ltd., International Business Machines Corporation, Samsung Display Co., Ltd.. Active years: 2016-2026.

USPTO Granted Patents = 40 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.2

ph-index = 4

Forward Citations = 59(Granted Patents)


Location History:

  • Santa Clara, CA (US) (2017)
  • Suwon-si, KR (2020 - 2023)
  • Los Altos, CA (US) (2020 - 2023)
  • Yongin-si, KR (2021 - 2023)
  • San Jose, CA (US) (2016 - 2024)

Company Filing History:


Years Active: 2016-2026

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Areas of Expertise:
Heusler Compounds
Spin-Orbit Torque
Magnetic Memory
Perpendicular Magnetic Anisotropy
Magnetic Junctions
Tunnel Magnetoresistance
Ferrimagnetic Materials
Tunable Films
Display Devices
Magnetic Damping
Synthetic Anti-Ferromagnets
Tetragonal Structures
40 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Jaewoo Jeong

Introduction

Jaewoo Jeong, based in San Jose, CA, is a prominent inventor known for his contributions in the field of magnetoresistive random-access memory (MRAM) technology. With an impressive portfolio of 32 patents, Jaewoo has made significant advancements in materials science and electronic devices, changing the landscape of data storage and retrieval.

Latest Patents

Among Jaewoo's latest innovations are his groundbreaking patents related to tetragonal half metallic half-Heusler compounds. One patent describes a magnetoresistive random-access memory cell that incorporates a templating layer composed of a binary alloy with an alternating layer lattice structure. This cell features a half metallic half-Heusler layer that is strategically placed outward of the templating layer, characterized by a tetragonal lattice structure and a unique in-plane lattice constant. Another recent patent focuses on magnetic tunneling junction switching utilizing parallel spin-momentum locked spin currents. This invention details a device with a substrate and an MTJ that includes a reference layer, a tunnel barrier layer, and a free layer, augmented by a PSM layer that significantly enhances device performance by reducing switching current requirements.

Career Highlights

Jaewoo has built a remarkable career in leading technology companies. He has worked at renowned firms such as Samsung Electronics Co., Ltd. and the International Business Machines Corporation (IBM), where he actively contributed to the advancement of MRAM technology and other innovative electronic systems. His experience across these industry giants has significantly enriched his innovative capabilities and understanding of complex engineering challenges.

Collaborations

Throughout his career, Jaewoo Jeong has collaborated with talented colleagues, including Mahesh Govind Samant and Yari Ferrante. These partnerships have fueled the innovative process and allowed for the exchange of ideas that led to the successful development of cutting-edge technologies in his patent portfolio.

Conclusion

Jaewoo Jeong’s extensive body of work and his innovative approach to MRAM technology make him a key figure in the landscape of electronic memory advancements. His contributions continue to influence the development of more efficient and powerful data storage solutions, showcasing the vital role of inventors in driving technological progress.

Profile summary based on public USPTO records.
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