The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Dec. 15, 2023
International Business Machines Corporation, Armonk, NY (US);
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
See-Hun Yang, Morgan Hill, CA (US);
Chirag Garg, San Jose, CA (US);
Panagiotis Charilaos Filippou, Fremont, CA (US);
Jaewoo Jeong, Los Altos, CA (US);
Jason Robert Joseph Martineau, Fremont, CA (US);
Mahesh Samant, San Jose, CA (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A memory array includes a word lines intersecting bit line-complementary bit line pairs at a plurality of cell locations. Magnetic tunnel junction cells are located at each location, and each cell is electrically connected to a corresponding bit line and selectively interconnected to a corresponding one of the complementary bit lines under control of a corresponding one of the word lines. Each cell includes a substrate; a seed layer overlying the substrate; a nitride layer, overlying the seed layer, and having a thickness greater than 5 Angstroms; a templating layer, outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 Angstroms; a magnetic layer overlying the templating layer, including a Heusler compound and exhibiting PMA; a tunnel barrier outward of the magnetic layer; and a magnetic layer outward of the tunnel barrier.