See-Hun Yang

Title: The Innovations of Inventor See-Hun Yang

Introduction

See-Hun Yang, an accomplished inventor based in San Jose, CA, holds an impressive portfolio of seven patents. His work primarily focuses on advancements in magnetic random access memory (MRAM) technology, which plays a crucial role in enhancing computer memory performance.

Latest Patents

Among his latest patents is a novel seed layer designed for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films. This development involves a magnetic random access memory (MRAM) stack that includes a first magnetic layer comprising a Heusler compound. The MRAM stack is engineered with one or more seed layers that feature a templating structure possessing a crystalline structure to effectively template the Heusler compound. Notably, a chromium (Cr) layer is formed beneath the templating structure, enhancing the tunnel magnetoresistance (TMR) of the MRAM stack.

Another significant patent involves magnetic tunneling junction switching utilizing parallel spin-momentum locked spin current. This invention presents methods and apparatus for MRAM devices that employ spin transfer torque. The device configuration includes a substrate and a magnetic tunneling junction (MTJ) built atop the substrate, comprising a reference layer, a tunnel barrier layer, and a free layer. A PSM layer, which serves as a chiral material layer, is positioned above the free layer, supplying an extra source of spin-transfer torque and allowing MTJ devices to operate with lower switching currents.

Career Highlights

See-Hun Yang has had an impressive career, working with prestigious companies such as IBM and Samsung Electronics Co., Ltd. His contributions to the field of memory technologies, particularly in MRAM, have established him as a notable figure in the industry.

Collaborations

Throughout his career, Yang has collaborated with esteemed colleagues, including Stuart Stephen Papworth Parkin and Luc Thomas, enriching his research and development endeavors within the MRAM space.

Conclusion

In summary, See-Hun Yang's innovative work and patent contributions have significant implications for the evolution of MRAM technology. His commitment to enhancing memory performance through clever engineering and collaboration marks him as a leading inventor in the field.