The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Nov. 15, 2023
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
International Business Machines Corporation, Armonk, NY (US);
See-Hun Yang, San Jose, CA (US);
Mahesh Govind Samant, San Jose, CA (US);
Panagiotis Charilaos Filippou, San Jose, CA (US);
Chirag Garg, San Jose, CA (US);
Fnu Ikhtiar, San Jose, CA (US);
Jaewoo Jeong, San Jose, CA (US);
Abstract
Methods and apparatuses are provided for MRAM devices utilizing spin transfer torque. A device includes a substrate; an MTJ formed over the substrate, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; and a PSM layer formed over the free layer of the MTJ. The PSM layer, i.e., a chiral material layer, may be formed adject to a free layer (or adjacent to a TBL, which is adjacent to the free layer) of the MTJ, providing an additional source of spin-transfer-torque, and providing MTJ devices that are operable with lower switching current.