The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2025
Filed:
Jun. 17, 2022
International Business Machines Corporation, Armonk, NY (US);
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Panagiotis Charilaos Filippou, Fremont, CA (US);
Chirag Garg, San Jose, CA (US);
See-Hun Yang, Santa Clara, CA (US);
Mahesh Samant, San Jose, CA (US);
Ikhtiar, Santa Clara, CA (US);
Jaewoo Jeong, Los Altos, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, and a computer system. The MRAM stack includes a first magnetic layer comprising a Heusler compound. The MRAM stack also includes one or more seed layers including a templating structure having a crystalline structure configured to template the Heusler compound. The magnetic layer is formed over the templating structure. The MRAM stack also includes a chromium (Cr) layer formed under the templating structure. The Cr layer is configured to enhance a tunnel magnetoresistance (TMR) of the MRAM stack.