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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12755770 B1

PDFFull Text
Date of Patent:
Oct. 06, 2026

Filed:

Jul. 06, 2023

Fe-x templating layers for growth of perpendicularly magnetized heusler films on top of a tunnel barrier

Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jaewoo Jeong, Los Altos, CA (US);

Ikhtiar, San Jose, CA (US);

Panagiotis Charilaos Filippou, San Jose, CA (US);

Chirag Garg, San Jose, CA (US);

Mahesh Samant, San Jose, CA (US);

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Womble Bond Dickinson (US) LLP

Primary Examiner:

Jami Valentine Miller

Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02);
Abstract

A magnetic random-access memory (MRAM) device includes a substrate, a bottom magnetic reference layer on the substrate, a tunnel barrier layer above the bottom magnetic reference layer, and a top magnetic free layer above the tunnel barrier layer. The top magnetic free layer includes a chemical templating layer on the tunnel barrier layer and a magnetic layer on the chemical templating layer. The chemical templating layer includes a binary alloy of FeX which may have a BiFprototype structure in which y is in a range from 0.9 to 3.3, and the magnetic layer includes a Heusler compound having substantially perpendicular magnetic anisotropy.

Find Patent Forward Citations

Jeong, Jaewoo. (2026). Fe-x templating layers for growth of perpendicularly magnetized heusler films on top of a tunnel barrier (U.S. Patent No. 12755770). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12755770

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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