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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12757639 B1

PDFFull Text
Date of Patent:
Oct. 06, 2026

Filed:

Mar. 07, 2023

Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized heusler films

Applicants:

International Business Machines Corporation, Armonk, NY (US);

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Panagiotis Charilaos Filippou, Fremont, CA (US);

Chirag Garg, San Jose, CA (US);

Mahesh Samant, San Jose, CA (US);

. Ikhtiar, San Jose, CA (US);

Jaewoo Jeong, Los Altos, CA (US);

Assignees:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Amin, Turocy & Watson, LLP

Primary Examiner:

Yara B Green

Assistant Examiner:

Erika H Son

Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/20 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/20 (2023.02); H10N 50/85 (2023.02);
Abstract

A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, a computer system, and an MRAM device. The MRAM stack includes a first magnetic layer including a Heusler compound. The MRAM stack also includes one or more seed layers including a multi-layer templating structure that includes a crystalline structure configured to template the Heusler compound and enhance a tunnel magnetoresistance (TMR) of the MRAM stack. The first magnetic layer is formed over the multi-layer templating structure. The multi-layer templating structure includes a layer of a first binary alloy including tungsten-aluminum (WAl), and a layer of a second binary alloy having a cesium-chloride (CsCl) structure. The second binary alloy overlays the first binary alloy.

Find Patent Forward Citations

Filippou, Panagiotis. (2026). Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized heusler films (U.S. Patent No. 12757639). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757639

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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