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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12757640 B1

PDFFull Text
Date of Patent:
Oct. 06, 2026

Filed:

Jul. 06, 2023

Nitride seed layer with high thermal stability for growth of perpendicularly magnetized heusler films

Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jaewoo Jeong, San Jose, CA (US);

Ikhtiar, San Jose, CA (US);

Panagiotis Charilaos Filippou, Fremont, CA (US);

Chirag Garg, San Jose, CA (US);

See-Hun Yang, Morgan Hill, CA (US);

Mahesh Samant, San Jose, CA (US);

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Womble Bond Dickinson (US) LLP

Primary Examiner:

Jami Valentine Miller

Int. Cl.
CPC ...
H10N 50/80 (2023.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/20 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/20 (2023.02); H10N 50/85 (2023.02);
Abstract

A magnetic memory device includes a substrate, a thermally stable nitride seed layer substantially oriented in a (001) direction above the substrate, a chemical templating layer above the thermally stable nitride seed layer, and a magnetic layer above the chemical templating layer. The chemical templating layer includes a binary alloy having a CsCl prototype structure, and the magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy (PMA).

Find Patent Forward Citations

Jeong, Jaewoo. (2026). Nitride seed layer with high thermal stability for growth of perpendicularly magnetized heusler films (U.S. Patent No. 12757640). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12757640

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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