Samsung Electronics Co., Ltd.

International Business Machines Corporation

Samsung Display Co., Ltd.

Jaewoo Jeong

Mahesh Govind Samant

Yari Ferrante

Panagiotis Charilaos Filippou

Stuart S P Parkin

Chirag Garg

Jongjun Baek

Byungsoo So

Ikhtiar

Stuart Stephen Papworth Parkin

Dmytro Apalkov

Woojin Kim

Keewon Kim

See-Hun Yang

Hyungue Kim

Mohamad Towfik Krounbi

Tae Hoon Yang

Jong Chan Lee

Xueti Tang

Taewook Kang

Woong Hee Jeong

Byung Soo So

Roman Chepulskyy

Jongoh Seo

Byongmo Moon

Hiroshi Okumura

Kibum Kim

Fnu Ikhtiar

S P Stuart Parkin

Sergey V Faleev

Minkyung Kang

Sergey Faleev

Ikhtiar Ikhtiar

- Ikhtiar

A spin-orbit torque magnetic random-access memory (SOT-MRAM) device includes a substrate, a spin orbit torque line above the substrate, a composite-metal-oxide seed layer above the spin orbit torque line, and a magnetic tunnel junction above the composite-metal-oxide seed layer. The magnetic tunnel junction includes a free layer above the composite-metal-oxide seed layer, a main tunneling barrier layer above the free layer, and a pinned layer above the main tunneling barrier layer.

Spin-orbit torque magnetic random-access memory (SOT-MRAM) device

A device is provided. The device includes a multi-layered structure that is non-magnetic at room temperature, the multi-layered structure comprising alternating layers of Co and E, wherein E comprises at least one other element selected from the group consisting of Ge, Ga, Sn and Al, wherein a composition of the multi-layered structure is represented by CoE, with x being in a range from 0.42 to 0.55. The device also includes a combined layer provided in contact with the multi-layered structure, the combined layer including an insertion layer comprising Co or Fe or Mn or Al in contact with a Heusler compound.

Tuning perpendicular magnetic anisotropy of Heusler compound in MRAM devices

A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, and a computer system. The MRAM stack includes a first magnetic layer comprising a Heusler compound. The MRAM stack also includes one or more seed layers including a templating structure having a crystalline structure configured to template the Heusler compound. The magnetic layer is formed over the templating structure. The MRAM stack also includes a chromium (Cr) layer formed under the templating structure. The Cr layer is configured to enhance a tunnel magnetoresistance (TMR) of the MRAM stack.

Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler films

A magnetoresistive random-access memory cell includes a templating layer. The templating layer includes a binary alloy having an alternating layer lattice structure. The cell further includes a half metallic half-Heusler layer including a half metallic half-Heusler material having a tetragonal lattice structure. The half metallic half-Heusler layer is located outward of the templating layer, and has a half-Heusler in-plane lattice constant that is different from an in-plane lattice constant in a cubic form of the half metallic half-Heusler material. A tunnel barrier is located outward of the half metallic half-Heusler layer, and a magnetic layer is located outward of the tunnel barrier.

Tetragonal half metallic half-Heusler compounds

Methods and apparatuses are provided for MRAM devices utilizing spin transfer torque. A device includes a substrate; an MTJ formed over the substrate, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; and a PSM layer formed over the free layer of the MTJ. The PSM layer, i.e., a chiral material layer, may be formed adject to a free layer (or adjacent to a TBL, which is adjacent to the free layer) of the MTJ, providing an additional source of spin-transfer-torque, and providing MTJ devices that are operable with lower switching current.

Magnetic tunneling junction switching with parallel spin-momentum locked spin current

A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.

Insertion layers for perpendicularly magnetized Heusler layers with reduced magnetic damping

A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by DE, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L1compound, the magnetic layer being in contact with the templating structure.

Tunable templating layers for perpendicularly magnetized Heusler films

A magnetic device is described. The magnetic device includes a magnetic junction, a spin-orbit interaction (SO) line and a dipole-coupled layer. The magnetic junction includes a free layer. The SO line is adjacent to the free layer, carries a current in-plane and exerts a SO torque on the free layer due to the current passing through the SO line. The free layer being switchable between stable magnetic states using the SO torque. The SO line is between the free layer and the dipole-coupled layer. The dipole-coupled layer is magnetically coupled to the free layer. At least one of the free layer and the dipole-coupled layer has a damping of greater than 0.02.

Dipole-coupled spin-orbit torque structure

A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by AE, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.

Ferrimagnetic Heusler compounds with high spin polarization

A device including a templating structure and a magnetic layer is described. The templating structure includes D and E. A ratio of D to E is represented by DE, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The magnetic layer is on the templating structure and includes at least one of a Heusler compound and an L1compound. The magnetic layer is in contact with the templating structure and being magnetic at room temperature.

Templating layers for perpendicularly magnetized Heusler films/compounds

A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.

Display apparatus and method of manufacturing the same

A method of manufacturing a display apparatus includes forming a first substrate on a support substrate; forming a first barrier layer on the first substrate; and forming a conductive layer by implanting n-type impurities or p-type impurities in the first barrier layer and at least a portion of the first substrate. A display apparatus includes a conductive layer arranged on a substrate and a barrier layer arranged on the conductive layer. The conductive layer is doped with n-type impurities when the first barrier layer is doped with n-type impurities, and the conductive layer is doped with p-type impurities when the first barrier layer is doped with p-type impurities.

Display apparatus with doped barrier and conductive layers and method of manufacturing the same

A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.

Magnetic junctions having enhanced tunnel magnetoresistance and utilizing heusler compounds

A display panel includes: a base substrate; a circuit layer on the base substrate; and a display element layer on the circuit layer, wherein the circuit layer includes an active layer on the base substrate and containing boron and fluorine; a control electrode on the active layer; and a control electrode insulation layer between the active layer and the control electrode, wherein the active layer includes: a core layer in which a concentration of the boron is greater than a concentration of the fluorine; and a surface layer on the core layer and in which a concentration of the fluorine is greater than a concentration of the boron.

Method for manufacturing display panel by providing laser light to doped preliminary active layer to form active layer

A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1&#x2212;xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.

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San Jose, CA, United States of America

Jaewoo Jeong