The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Jul. 10, 2023
International Business Machines Corporation, Armonk, NY (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Mahesh Samant, San Jose, CA (US);
Sergey Faleev, Santa Clara, CA (US);
Panagiotis Charilaos Filippou, Fremont, CA (US);
Chirag Garg, San Jose, CA (US);
Jaewoo Jeong, Los Altos, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A magnetoresistive random-access memory cell includes a templating layer, including a binary alloy having an alternating layer lattice structure, and a half metallic Heusler multilayer structure including a plurality of layers of two different Heusler compounds, at least one of which is half metallic. The half metallic Heusler multilayer structure is located outward of the templating layer and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the half metallic Heusler multilayer structure, and a magnetic layer is outward of the tunnel barrier.