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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12765265 B1

PDFFull Text
Date of Patent:
Oct. 13, 2026

Filed:

Mar. 02, 2023

Perpendicular shape anisotropy design with asymmetric composite free layer

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dmytro Apalkov, San Jose, CA (US);

Roman Chepulskyy, Milpitas, CA (US);

Jaewoo Jeong, San Jose, CA (US);

Fnu Ikhtiar, San Jose, CA (US);

Sungchul Lee, Osan-Si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., , KR;

Attorney:

Renaissance IP Law Group LLP

Primary Examiner:

Shih Tsun a Chou

Int. Cl.
CPC ...
H10N 50/10 (2023.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10B 61/22 (2023.02); H10N 50/85 (2023.02);
Abstract

A perpendicular shape anisotropy magnetic tunnel junction structure includes a reference layer, a non-magnetic layer, and a free layer. The reference layer includes a first side and a second side that is opposite the first side. The non-magnetic spacer includes a first side and a second side. The first side of the non-magnetic spacer is on the second side of the first reference layer. The free layer includes a first side and a second side. The first side of the free layer is on the second side of the non-magnetic spacer. The free layer further includes a first layer on the first side of the free layer, a second layer on the second side of the free layer and a coupling layer disposed between the first layer and the second layer. A saturation magnetization of the second layer is between 2-5 times inclusive a saturation magnetization of the first layer.

Find Patent Forward Citations

Apalkov, Dmytro. (2026). Perpendicular shape anisotropy design with asymmetric composite free layer (U.S. Patent No. 12765265). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765265

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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