The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Feb. 12, 2021
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Panagiotis Charilaos Filippou, San Jose, CA (US);

Chirag Garg, San Jose, CA (US);

Yari Ferrante, San Jose, CA (US);

Stuart S. P. Parkin, San Jose, CA (US);

Jaewoo Jeong, Los Altos, CA (US);

Mahesh G. Samant, San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01F 1/40 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); H01F 1/408 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1−xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.


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